IGBTs | FGH40T120SMDL4

IGBT，1200V，25A，FS 沟槽

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概览

安森美半导体的新型场截止沟槽 IGBT 系列采用创新的场截止沟槽 IGBT 技术，为太阳能逆变器、UPS、焊接机和 PFC 等硬开关应用提供最佳性能。

  • FS 沟道技术，正温度系数
  • 由于使用了开尔文发射极引脚，因此提供卓越的开关性能
  • 低饱和电压： VCE(sat) = 1.8 V（IC = 40 A）
  • ILM(1)部件100%检测
  • 高输入阻抗
  • 符合 RoHS 标准

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

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Container Qty.

ON Target

Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

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Irr Typ (A)

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FGH40T120SMDL4

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Obsolete

CAD Model

Pb

A

H

P

TO-247-4

340CJ

NA

0

TUBE

450

N

-

1200

40

1.8

3.8

1.02

2.24

200

7.2

370

-

-

555

Yes

Price N/A

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