IGBTs | FGH4L75T65MQDC50

650V Field stop 4th generation mid speed IGBT with co-pack SiC diode 

量产中

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概览

Using the novel field stop 4th generation IGBT and 1.5 generation SiC Schottky Diode technology in TO-247 4-lead package, FGH4L75T65MQDC50 offers the optimum performance with low conduction and switching losses for high-efficiency operations for industrial applications

  • Solar Inverter
  • UPS
  • Energy Storage System
  • PFC
  • EV Charging Stations

  • Solar Inverter
  • UPS
  • Energy Storage System
  • EV Charging Stations

  • Positive temperature co-efficient
  • Low Vce(sat)
  • Low Eon and Eoff

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

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ON Target

Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

参考价格

FGH4L75T65MQDC50

联系销售

量产中

CAD Model

Pb

A

H

P

TO-247-4

340CJ

NA

0

TUBE

450

No

-

650

75

1.45

1.46

0.96

0.72

~NA~

~NA~

145

~NA~

~NA~

385

Yes

$5.8052

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可靠性数据

Die Related Summary Data

Device: FGH4L75T65MQDC50

Equivalent to wafer fab process: IGBT

产品技术

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

IGBT

3

4409167636

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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