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此款隔离门极双极晶体管 (IGBT) 采用坚固耐用、经济高效的场截止 IV 沟槽结构,为要求苛刻的开关应用提供卓越性能,提供低导通状态电压,并最大限度降低开关损耗。另外,此新器件采用 TO−247−4L 封装,与标准 TO−247−3L 封装相比提供了明显的 Eon 损耗降低。此款 IGBT 非常适合 UPS 和太阳能应用。此器件集成了一个柔软、快速的组合封装续流二极管,采用低正向电压。
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V(BR)CES Typ (V)
IC Max (A)
VCE(sat) Typ (V)
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Reference Price
FGH75T65SQDNL4
Active
Pb
A
H
P
TO-247-4
NA
0
TUBE
450
Y
-
650
75
1.43
1.6
1.26
1.25
134
10
128
-
-
375
Yes
$4.3126
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可靠性数据
Die Related Summary Data
Device: FGH75T65SQDNL4
Equivalent to wafer fab process: IGBT
产品技术
产品技术
等效器件小时
平均故障间隔时间/平均无故障时间(按小时计算)
FITS
IGBT
1
2930462991
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Re-calculate Data
Data is based on the following assumptions.
Note: The temperature and confidence level may be adjusted to your requirements.
Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)