IGBTs | FGH75T65UP_F085

650 V、75 A、1.69 V、TO-247
场截止 IGBT

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概览

飞兆半导体的新型场截止沟道 IGBT 系列采用创新型场截止沟道 IGBT 技术，为汽车充电器、光伏逆变器、UPS 和数字发电机等低导通和开关损耗至关重要的应用提供了最佳性能。

  • PTC Heater, Induction Heater
  • Smart Relay, Battery Disconnect Unit

  • 最大结温： TJ =175oC
  • 正温度系数，易于并联运行
  • 高电流能力
  • 低饱和电压： VCE(sat) = 1.65V（典型值） （IC = 75 A）
  • 高输入阻抗
  • 紧密的参数分布
  • 符合 RoHS 标准
  • 符合 AEC-Q101 汽车行业标准要求

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FGH75T65UPD-F085

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Pb

A

H

P

TO-247-3

340CK

NA

0

TUBE

450

N

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650

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$4.2548

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可靠性数据

Die Related Summary Data

Device: FGH75T65UPD-F085

Equivalent to wafer fab process: 3B,IJ

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

3B,IJ

0

1915930880

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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