IGBT,650 V,40A,场截止沟槽

Obsolete

概览

安森美半导体的新型场截止第 4 代 RC IGBT 系列采用新型场截止 IGBT 技术,提供了卓越导通和开关性能以及简便的并行运行,适用于消费品和工业应用。

  • Soft Switching Application

  • Inverterized micro wave oven

  • Maximum Junction Temperature:TJ = 175°C
  • Low Saturation Voltage:VCE(sat) = 1.35 V ( Typ.) @ Ic = 40 A
  • Positive Temperature Co-efficient for Easy Parallel Operating
  • High Current Capability
  • 100% of the Parts tested for ILM(1)
  • High Input Impedance
  • Tighten Parameter Distribution
  • RoHS Compliant
  • Low Conduction Loss Design for Soft Switching Application
  • IGBT with Monolithic Reverse Conducting Diode

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

Reference Price

FGHL40S65UQ

CAD Model

Pb

A

H

P

TO-247-3LD

NA

0

TUBE

450

N

-

650

40

1.36

1.24

0.362

1.76

319

-

304

-

-

192

No

Price N/A

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