IGBTs | FGHL75T65MQDTL4

IGBT - 650 V 75 A FS4 medium switching speed IGBT with full rated copack diode

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onsemi's series of field stop 4th generation IGBTs offer the optimum performance by balancing Vce(sat) and Eoff losses and well controllable turnoff Vce overshoot. Well suited for solar inverter, UPS, EV charging stations, ESS and other hi performance power conversion applications.

  • PFC boost converter
  • T-type inverter
  • I-type inverter
  • HERIC inverter

  • UPS
  • Solar Inverters
  • EV charging stations
  • Energy storage systems

  • Positive temperature co-efficient
  • Low Vce(sat)
  • Low Eon and Eoff

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V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

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Co-Packaged Diode

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FGHL75T65MQDTL4

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CAD Model

Pb

A

H

P

TO-247-4

340CJ

NA

0

TUBE

450

F

-

650

75

1.45

1.65

1.1

1.2

107

~NA~

149

~NA~

~NA~

375

Yes

$3.0327

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可靠性数据

Die Related Summary Data

Device: FGHL75T65MQDTL4

Equivalent to wafer fab process: 3B,IJ

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

3B,IJ

0

1915930880

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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