IGBTs | FGL60N100BNTD

1000V，60A，NPT 沟槽 IGBT

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概览

该 1000V NPT IGBT 采用安森美半导体的专属沟槽设计和先进 NPT 技术，提供卓越导通和开关性能、高雪崩耐用性和轻松并联操作。此器件为 UPS 和焊接机等硬开关应用提供最佳性能。

  • 不间断电源
  • 其他工业

  • 高速开关
  • 低饱和电压：VCE(sat) = 2.5 V @ IC = 60A
  • 高输入阻抗
  • 内置快速恢复二极管

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V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

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Irr Typ (A)

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FGL60N100BNTD

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Obsolete

CAD Model

Pb

A

H

P

TO-264-3

340CA

NA

0

TUBE

375

N

-

1000

42

2.5

-

-

-

-

-

-

-

-

-

Yes

Price N/A

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FGL60N100BNTDTU

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Last Shipments

CAD Model

Pb

A

H

P

TO-264-3

340CA

NA

0

TUBE

375

N

-

1000

42

2.5

-

-

-

-

-

-

-

-

-

Yes

Price N/A

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可靠性数据

Die Related Summary Data

Device: FGL60N100BNTDTU

Equivalent to wafer fab process: 3B,IK

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

3B,IK

0

831217026

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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