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该 1000V NPT IGBT 采用安森美半导体的专属沟槽设计和先进 NPT 技术,提供卓越导通和开关性能、高雪崩耐用性和轻松并联操作。此器件为 UPS 和焊接机等硬开关应用提供最佳性能。
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CAD Models
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Package Type
Case Outline
MSL Type
MSL Temp (°C)
Container Type
Container Qty.
ON Target
Family
V(BR)CES Typ (V)
IC Max (A)
VCE(sat) Typ (V)
VF Typ (V)
Eoff Typ (mJ)
Eon Typ (mJ)
Trr Typ (ns)
Irr Typ (A)
Gate Charge Typ (nC)
Short Circuit Withstand (µs)
EAS Typ (mJ)
PD Max (W)
Co-Packaged Diode
Reference Price
FGL60N100BNTD
Pb
A
H
P
TO-264-3
NA
0
TUBE
375
N
-
1000
42
2.5
-
-
-
-
-
-
-
-
-
Yes
Price N/A
More Details
FGL60N100BNTDTU
Pb
A
H
P
TO-264-3
NA
0
TUBE
375
N
-
1000
42
2.5
-
-
-
-
-
-
-
-
-
Yes
Price N/A
More Details
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可靠性数据
Die Related Summary Data
Device: FGL60N100BNTDTU
Equivalent to wafer fab process: 3B,IK
产品技术
产品技术
等效器件小时
平均故障间隔时间/平均无故障时间(按小时计算)
FITS
3B,IK
0
831217026
More Details
Re-calculate Data
Data is based on the following assumptions.
Note: The temperature and confidence level may be adjusted to your requirements.
Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)