IGBTs | FGP5N60LS

IGBT，600V，5A，场截止

Obsolete

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概览

安森美半导体的新型场截止 IGBT 系列采用新型场截止 IGBT 技术，为低导通损耗至关重要的 HID 镇流器提供了最佳性能。

  • 其他工业

  • 高电流能力
  • 低饱和电压：VCE(sat) =1.7V @ IC = 5A
  • 高输入阻抗
  • 符合 RoHS 标准

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

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V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

Reference Price

FGP5N60LS

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Obsolete

CAD Model

Pb

A

H

P

TO-220-3

340AT

NA

0

TUBE

800

N

-

600

5

1.7

-

130

38

-

-

18.3

-

-

83

No

Price N/A

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可靠性数据

Die Related Summary Data

Device: FGP5N60LS

Equivalent to wafer fab process: IGBT

产品技术

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

IGBT

1

2930462991

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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