IGBTs | FGY100T120SWD

1200V, 100A Field Stop VII (FS7) Discrete IGBT in Power TO247-3L Packaging

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Using the novel field stop 7th generation IGBT technology and the Gen7 Diode in TP247 3-lead package, FGY100T120SWD offers the optimum performance with low switching and conduction losses for high-efficiency operations in various applications like Solar, UPS and ESS.

  • Boost and Inverter in Solar System
  • UPS
  • Energy Storage System
  • Solar Inverter
  • UPS
  • Residential Energy Storage System
  • Low switching loss
  • Maximum Junction Temperature- TJ =175C
  • Positive Temperature Coefficient
  • Smooth and Optimized Switching
  • RoHS Compliant

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V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

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Irr Typ (A)

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Short Circuit Withstand (µs)

EAS Typ (mJ)

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Co-Packaged Diode

参考价格

FGY100T120SWD

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量产中

CAD Model

Pb

A

H

P

TO-247-3

340CD

NA

0

TUBE

450

No

FS7

1200

100

1.7

1.91

2.95

10.6

229

50.3

284

~NA~

~NA~

618

Yes

$5.9599

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可靠性数据

Die Related Summary Data

Device: FGY100T120SWD

Equivalent to wafer fab process: FS7, FRD

产品技术

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

FS7, FRD

0

2029065257

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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