IGBTs | FGY4L75T120SWD

IGBT – Power, Co-PAK N-Channel, Field Stop VII (FS7), TO247-4L 1200 V, 1.7 V, 75A

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Using the novel field stop 7th generation IGBT technology and the Gen7 Diode in TO247 4−lead package, FGY4L75T120SWD offers the optimum performance with low switching and conduction losses for high−efficiency operations in various applications like Solar Inverter, UPS and ESS.

  • Solar Inverter
  • UPS
  • Energy Storage System
  • Commerical and Industrial String Solar Inverter
  • Residential Solar Inverter
  • Energy Storage PCS
  • UPS
  • Maximum Junction Temperature TJ = 175C
  • Positive Temperature Coefficient
  • High Current Capability
  • Smooth and Optimized Switching
  • Low Switching Loss
  • RoHS Compliant

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Co-Packaged Diode

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FGY4L75T120SWD

联系销售

量产中

CAD Model

Pb

A

H

P

TO−247−PLUS−4L 15.80x22.54x5.00, 2.54P

340BW

NA

0

TUBE

30

No

FS7

1200

75

1.7

1.9

2.1

2.9

208

48.7

225.6

~NA~

~NA~

555

Yes

$5.1808

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可靠性数据

Die Related Summary Data

Device: FGY4L75T120SWD

Equivalent to wafer fab process: FS7, FRD

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

FS7, FRD

0

2029065257

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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