IGBTs | FGY60T120SQDN

IGBT，超场截止 -1200V 60A

量产中

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概览

此绝缘门极双极晶体管 (IGBT) 采用坚固耐用、经济高效的超场截止 (FS) 沟槽结构，为要求苛刻的开关应用提供出色性能，提供低导通状态电压，并最大限度降低开关损耗。此款 IGBT 非常适合 UPS 和太阳能应用。该器件结合了一个软性和快速的组合封装续流二极管，带有低正向电压。

  • Solar Inverter
  • EV charging station
  • Industrial
  • Extremely Efficient Trench with Ultra Field Stop Technology
  • TJmax = 175°C
  • Soft Fast Reverse Recovery Diode
  • Optimized for High Speed Switching
  • These are Pb−Free Devices

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

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Container Qty.

ON Target

Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

参考价格

FGY60T120SQDN

联系销售

量产中

CAD Model

Pb

A

H

P

TO-247-3

340CD

NA

0

TUBE

450

Yes

FS7

1200

60

1.7

-

-

-

-

-

-

-

-

-

-

$6.2341

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可靠性数据

Die Related Summary Data

Device: FGY60T120SQDN

Equivalent to wafer fab process: IGN IGBT

产品技术

产品技术

等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

IGN IGBT

12

30217118471

More Details

Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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