IGBTs | FGY75N60SMD

600V，75A，场截止IGBT

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概览

飞兆半导体的场截止第二代 IGBT 新系列采用新型场截止 IGBT 技术，为光伏逆变器、UPS、焊机和 PFC 等低导通和开关损耗至关重要的应用提供最佳性能。

  • 发电和配电

  • 高电流能力
  • 低饱和电压：VCE(sat) = 1.9V @ IC = 75A
  • 高输入阻抗
  • 快速开关：EOFF =10uJ/A
  • 符合 RoHS 标准

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Package Type

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MSL Type

MSL Temp (°C)

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ON Target

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V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

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FGY75N60SMD

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CAD Model

Pb

A

H

P

TO-247-3

340CD

NA

0

TUBE

450

N

-

600

75

1.9

1.75

0.77

2.3

126

-

248

-

-

750

Yes

Price N/A

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可靠性数据

Die Related Summary Data

Device: FGY75N60SMD

Equivalent to wafer fab process: 3B,IM

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

3B,IM

0

975477967

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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