IGBTs | FGY75N60SMD

600V，75A，场截止IGBT

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数据表

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概览

飞兆半导体的场截止第二代 IGBT 新系列采用新型场截止 IGBT 技术，为光伏逆变器、UPS、焊机和 PFC 等低导通和开关损耗至关重要的应用提供最佳性能。

  • 发电和配电
  • 高电流能力
  • 低饱和电压：VCE(sat) = 1.9V @ IC = 75A
  • 高输入阻抗
  • 快速开关：EOFF =10uJ/A
  • 符合 RoHS 标准

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V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

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Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

参考价格

FGY75N60SMD

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Last Shipments

CAD Model

Pb

A

H

P

TO-247-3

340CD

NA

0

TUBE

450

No

-

600

75

1.9

1.75

0.77

2.3

126

-

248

-

-

750

Yes

Price N/A

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可靠性数据

Die Related Summary Data

Device: FGY75N60SMD

Equivalent to wafer fab process: 3B,IM

产品技术

产品技术

等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

3B,IM

0

1730649151

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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