IGBTs | FGY75T95SQDT

IGBT - 950 V 75 A Field stop trench IGBT

已停产

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概览

Trench Field Stop 4th generation IGBT for High performance power conversion application. Specifically designed with low Eoff/Eon Operation for fast switching speed where switching loss loss is critical.

  • I-NPC inverter
  • T-NPC Inverter
  • Solar inverter
  • UPS
  • Positive temperature coefficient
  • Maximum Junction temperature : TJ = 175 C
  • Fast switching
  • Tight parameter distribution

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

参考价格

FGY75T95SQDT

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已停产

CAD Model

Pb

A

H

P

TO-247-3

340CD

NA

0

TUBE

450

No

-

950

75

1.69

2.03

1

2.1

105

~NA~

137

~NA~

~NA~

434

Yes

Price N/A

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可靠性数据

Die Related Summary Data

Device: FGY75T95SQDT

Equivalent to wafer fab process: 3B,IJ

产品技术

产品技术

等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

3B,IJ

1

6249407224

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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