IGBTs | HGTG11N120CND

1200 V NPT IGBT

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概览

HGTG11N120CND 基于非穿通 (NPT) IGBT 设计。该 IGBT 非常适合许多工作频率中等，而低传导损耗又至关重要的高压开关应用，如 UPS、太阳能逆变器、电机控制和电源。

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V(BR)CES Typ (V)

IC Max (A)

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HGTG11N120CND

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CAD Model

Pb

A

H

P

TO-247-3

340CK

NA

0

TUBE

450

N

-

1200

22

2.1

-

-

-

32

-

-

-

-

-

Yes

$3.0034

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可靠性数据

Die Related Summary Data

Device: HGTG11N120CND

Equivalent to wafer fab process: 2F,3B

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

2F,3B

0

552010123

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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