IGBTs | HGTG18N120BND

IGBT，1200V，NPT

Obsolete

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概览

HGTG18N120BND 基于无通冲孔 (NPT) IGBT 设计。此 IGBT 适用于低导通损耗至关重要的、在中等频率下运行的多种高电压开关应用，如 UPS、太阳能逆变器、电机控制和电源。

  • 不间断电源
  • 其他工业

  • 26A, 1200V, TC = 110°C
  • 低饱和电压： VCE(sat) = 2.45V @ IC = 18A
  • 典型下降时间。 . . . . . . . . . . . . . . 140ns @ TJ = 150°C
  • 短路额定值
  • 低导通损耗

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

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Co-Packaged Diode

Reference Price

HGTG18N120BND

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Obsolete

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CAD Model

Pb

A

H

P

TO-247-3

340CK

NA

0

TUBE

450

N

-

1200

26

2.45

-

1.8

1.9

44

-

165

8

-

390

Yes

Price N/A

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可靠性数据

Die Related Summary Data

Device: HGTG18N120BND

Equivalent to wafer fab process: 2F,3B

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

2F,3B

0

552010123

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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