IGBTs | HGTG20N60A4

IGBT，600V，SMPS

Obsolete

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概览

HGTG20N60A4 具有最佳特性，既有 MOSFET 的高输入阻抗，又兼具双极晶体管的低导通状态损耗。此 IGBT 适用于务必保证低导通损耗的、在高频率下运行的多种高电压开关应用。此器件经过优化，可用于 UPS、焊接机和感应加热等快速开关应用。

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

Reference Price

HGTG20N60A4

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Obsolete

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CAD Model

Pb

A

H

P

TO-247-3

340CK

NA

0

TUBE

450

N

-

600

40

1.8

-

0.15

0.28

-

-

142

-

-

290

No

Price N/A

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可靠性数据

Die Related Summary Data

Device: HGTG20N60A4

Equivalent to wafer fab process: IGBT

产品技术

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

IGBT

1

2930462991

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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