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600V,PT IGBT
Obsolete
HGTG40N60B3 是一个 MOS 门极高电压开关器件,组合了 MOSFET 和双极晶体管的最佳特性。此器件具有 MOSFET 的高输入阻抗,以及双极晶体管的低导通状态损耗。低得多的导通状态电压降在 25°C 和 150°C 之间仅存在少量变化。此 IGBT 适用于低导通损耗至关重要的、在中等频率下运行的多种高电压开关应用,如: 交流和直流电机控制、电磁阀电源和驱动器、继电器和接触器。
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可靠性数据
Die Related Summary Data
Device: HGTG40N60B3
Equivalent to wafer fab process: IGBT
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等效器件小时
平均故障间隔时间/平均无故障时间(按小时计算)
FITS
IGBT
1
2930462991
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Data is based on the following assumptions.
Note: The temperature and confidence level may be adjusted to your requirements.
Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)