IGBTs | HGTG40N60B3

600V，PT IGBT

Obsolete

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概览

HGTG40N60B3 是一个 MOS 门极高电压开关器件，组合了 MOSFET 和双极晶体管的最佳特性。此器件具有 MOSFET 的高输入阻抗，以及双极晶体管的低导通状态损耗。低得多的导通状态电压降在 25°C 和 150°C 之间仅存在少量变化。此 IGBT 适用于低导通损耗至关重要的、在中等频率下运行的多种高电压开关应用，如： 交流和直流电机控制、电磁阀电源和驱动器、继电器和接触器。

  • 其他工业

  • 70A, 600V, TC = 25°C
  • 600 V 开关 SOA 能力
  • 典型下降时间： TJ=150°C 时为 140 ns
  • 短路额定值
  • 低导通损耗

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HGTG40N60B3

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Obsolete

CAD Model

Pb

A

H

P

TO-247-3

340CK

NA

0

TUBE

450

N

-

600

40

1.4

-

-

-

-

-

-

-

-

-

No

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可靠性数据

Die Related Summary Data

Device: HGTG40N60B3

Equivalent to wafer fab process: IGBT

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

IGBT

1

2930462991

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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