IGBTs | HGTG5N120BND

1200V，NPT IGBT

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概览

HGTG5N120BND 基于无通冲孔 (NPT) IGBT 设计。此 IGBT 适用于低导通损耗至关重要的、在中等频率下运行的多种高电压开关应用，如 UPS、太阳能逆变器、电机控制和电源。

  • 不间断电源
  • 10A, 1200V, TC = 110°C
  • 低饱和电压：V CE(sat) = 2.45 V，需 I C = 5 A
  • 典型下降时间。. . . . . . . . . . . . . . . TJ= 150°C时为175ns
  • 短路额定值
  • 低传导损耗

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V(BR)CES Typ (V)

IC Max (A)

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Irr Typ (A)

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参考价格

HGTG5N120BND

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Pb

A

H

P

TO-247-3

340CK

NA

0

TUBE

450

No

-

1200

10

2.45

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30

-

-

-

-

-

Yes

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可靠性数据

Die Related Summary Data

Device: HGTG5N120BND

Equivalent to wafer fab process: 2F,3B

产品技术

产品技术

等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

2F,3B

0

552010123

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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