1200V,NPT IGBT

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概览

HGTG5N120BND 基于无通冲孔 (NPT) IGBT 设计。此 IGBT 适用于低导通损耗至关重要的、在中等频率下运行的多种高电压开关应用,如 UPS、太阳能逆变器、电机控制和电源。

  • 不间断电源

  • 10A, 1200V, TC = 110°C
  • 低饱和电压:V CE(sat) = 2.45 V,需 I C = 5 A
  • 典型下降时间。. . . . . . . . . . . . . . . TJ= 150°C时为175ns
  • 短路额定值
  • 低传导损耗

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MSL Temp (°C)

Container Type

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Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

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Irr Typ (A)

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HGTG5N120BND

Last Shipments

CAD Model

Pb

A

H

P

TO-247-3

NA

0

TUBE

450

N

-

1200

10

2.45

-

-

-

30

-

-

-

-

-

Yes

Price N/A

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