IGBTs | HGTG7N60A4D

600V, SMPS IGBT

Obsolete

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概览

HGTP7N60A4D 结合最佳的 MOSFET 高输入阻抗特性和双极型晶体管的低通态导通损耗特性。 该 IGBT 非常适合许多工作频率很高，而低导通损耗又至关重要的高压开关应用。 该设备已被优化来实现快速开关应用，比如 UPS 和焊机。

  • 其他工业
  • 不间断电源

  • 14A, 600V @ TC = 110°C
  • 低饱和电压： V CE(sat)=1.9 V，需 I C=7 A
  • 典型下降时间。 . . . . . . . . . TJ=125°C 时为 75 ns
  • 低导通损耗

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V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

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HGTG7N60A4D

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Obsolete

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CAD Model

Pb

A

H

P

TO-247-3

340CK

NA

0

TUBE

450

N

-

600

14

1.9

-

-

-

-

-

-

-

-

-

Yes

Price N/A

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可靠性数据

Die Related Summary Data

Device: HGTG7N60A4D

Equivalent to wafer fab process: 2F,3B

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

2F,3B

0

552010123

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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