IGBTs | HGTP7N60A4

IGBT，600V，SMPS

Obsolete

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概览

HGTP7N60A4 同时具有 MOSFET 的高输入阻抗以及双极晶体管的低导通状态损耗的最佳特性。此 IGBT 适用于务必保证低导通损耗的、在高频率下运行的多种高电压开关应用。该器件已针对 UPS 和电焊机等快速开关应用进行了优化。

  • 不间断电源

  • 14A, 600V @ TC = 110°C
  • 低饱和电压：V CE(sat) = 1.9 V，需 I C = 7 A
  • 典型下降时间。. . . . . . . . . TJ = 125°C时为75ns
  • 低传导损耗

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

Reference Price

HGTP7N60A4

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Obsolete

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CAD Model

Pb

A

H

P

TO-220-3

340AT

NA

0

TUBE

800

N

-

600

14

1.9

-

-

-

-

-

-

-

-

-

No

Price N/A

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HGTP7N60A4-F102

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Obsolete

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CAD Model

Pb

A

H

P

TO-220-3

221A

NA

0

TUBE

800

N

-

600

-

-

-

0.06

0.055

-

-

37

-

25

125

-

Price N/A

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可靠性数据

Die Related Summary Data

Device: HGTP7N60A4

Equivalent to wafer fab process: IGBT

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

IGBT

1

2930462991

More Details

Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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