IGBTs | HGTP7N60A4

IGBT，600V，SMPS

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概览

HGTP7N60A4 同时具有 MOSFET 的高输入阻抗以及双极晶体管的低导通状态损耗的最佳特性。此 IGBT 适用于务必保证低导通损耗的、在高频率下运行的多种高电压开关应用。该器件已针对 UPS 和电焊机等快速开关应用进行了优化。

  • 不间断电源
  • 14A, 600V @ TC = 110°C
  • 低饱和电压：V CE(sat) = 1.9 V，需 I C = 7 A
  • 典型下降时间。. . . . . . . . . TJ = 125°C时为75ns
  • 低传导损耗

物质成分

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

Reference Price

HGTP7N60A4

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Obsolete

CAD Model

Pb

A

H

P

TO-220-3

340AT

NA

0

TUBE

800

N

-

600

14

1.9

-

-

-

-

-

-

-

-

-

No

Price N/A

More Details

HGTP7N60A4-F102

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Last Shipments

CAD Model

Pb

A

H

P

TO-220-3

221A

NA

0

TUBE

800

N

-

600

-

-

-

0.06

0.055

-

-

37

-

25

125

-

Price N/A

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