This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS)Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications.
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NGTB15N120IHRWG
Obsolete
Pb
A
H
P
TO-247-3
NA
0
TUBE
30
N
-
1200
15
2.1
1.75
0.34
-
-
-
160
-
-
333
Yes
Price N/A
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