IGBTs | NGTB15N120IHR

IGBT 1200V 15A FS2-RC Induction Heating

Obsolete

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概览

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS)Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications.

  • Inductive Heating
  • Consumer Appliances
  • Soft Switching

  • Extremely Efficient Trench with Fieldstop Technology
  • Optimized fo Low Case Temperature in IH Cooker Applications
  • Reliable and Cost Effective Single Die Solution

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MSL Temp (°C)

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V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

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Irr Typ (A)

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EAS Typ (mJ)

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Co-Packaged Diode

Reference Price

NGTB15N120IHRWG

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Obsolete

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CAD Model

Pb

A

H

P

TO-247-3

340AL

NA

0

TUBE

30

N

-

1200

15

2.1

1.75

0.34

-

-

-

160

-

-

333

Yes

Price N/A

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可靠性数据

Die Related Summary Data

Device: NGTB15N120IHRWG

Equivalent to wafer fab process: IGN IGBT

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

IGN IGBT

12

24556821265

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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