IGBT 1200V 25A FS1 Induction Heating

已停产

概览

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated into the device is a rugged co-packaged free wheeling diode with a low forward voltage.

  • Induction Heating
  • Consumer Appliances
  • Soft Switching
  • Rice Cooker
  • Induction Cooktop
  • Low Saturation Voltage using Trench with Fieldstop Technology
  • Low Switching Loss

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Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

参考价格

NGTB25N120IHLWG

已停产

CAD Model

Pb

A

H

P

TO-247-3

NA

0

TUBE

30

No

-

1200

25

1.85

1.7

0.8

-

-

-

200

-

-

192

Yes

Price N/A

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