This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated into the device is a rugged co-packaged free wheeling diode with a low forward voltage.
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NGTB25N120LWG
Obsolete
Pb
A
H
P
TO-247-3
NA
0
TUBE
30
N
-
1200
25
1.85
1.7
0.8
3.4
-
-
200
5
-
192
Yes
Price N/A
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