IGBT 1200V 25A FS1 Gen Mkt

添加至我的收藏

概览

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated into the device is a rugged co-packaged free wheeling diode with a low forward voltage.

  • Industrial Switching
  • Inverter Welding Machines
  • Microwave Ovens
  • Low Saturation Voltage using Trench with Fieldstop Technology
  • Low Switching Loss

产品列表

如需购买产品或样品,请先登录您的安森美账号。

搜寻

Close Search

产品:

1

分享

Product Groups:

Orderable Parts:

1

产品

状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

Reference Price

NGTB25N120LWG

Loading...

Obsolete

CAD Model

Pb

A

H

P

TO-247-3

NA

0

TUBE

30

N

-

1200

25

1.85

1.7

0.8

3.4

-

-

200

5

-

192

Yes

Price N/A

More Details

Show More

1-25 of 25

Products per page

Jump to :