IGBTs | NGTB25N120L

IGBT 1200V 25A FS1 Gen Mkt

Obsolete

数据表

购买

概览

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated into the device is a rugged co-packaged free wheeling diode with a low forward voltage.

  • Industrial Switching

  • Inverter Welding Machines
  • Microwave Ovens

  • Low Saturation Voltage using Trench with Fieldstop Technology
  • Low Switching Loss

Tools and Resources

Product services, tools and other useful resources related to NGTB25N120L

CAD Model

CAD模型

物质成分

产品更改通知

Buy/Parametrics Table

搜寻

Close Search

产品:

1

分享

排序方式

产品系列:

┗

可订购器件:

1

产品

状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

Reference Price

NGTB25N120LWG

Contact Sales

Obsolete

CAD Model

Pb

A

H

P

TO-247-3

340L-02

NA

0

TUBE

30

N

-

1200

25

1.85

1.7

0.8

3.4

-

-

200

5

-

192

Yes

Price N/A

More Details

Show More

1-25 of 25

Products per page

Jump to :

1
contact sales icon

Support on the go

Find and compare products, get support and connect with onsemi sales team.