IGBT,1200V 30A FS2 低 VCEsat

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概览

此款绝缘门极双极晶体管 (IGBT) 采用坚固耐用、经济高效的场截止 II Trench 结构,为要求苛刻的开关应用提供出色性能,提供低导通状态电压,并最大限度降低开关损耗。该 IGBT 非常适用于电机驱动器应用。此器件集成具有低正向电压的软快速共封装续流二极管。

  • Motor Drive Inverter
  • Industrial Switching
  • Welding
  • Extremely Efficient Trench with Field Stop Technology
  • TJmax = 175°C
  • Soft Fast Reverse Recovery Diode
  • Optimized for Low VCEsat
  • 10 µs Short Circuit Capability

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

Reference Price

NGTB30N120L2WG

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Obsolete

CAD Model

Pb

A

H

P

TO-247-3

NA

0

TUBE

30

N

-

1200

30

1.7

1.5

1.4

4.4

450

32

310

10

-

534

Yes

Price N/A

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