IGBTs | NGTB30N120L2

IGBT，1200V 30A FS2 低 VCEsat

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数据表

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概览

此款绝缘门极双极晶体管 (IGBT) 采用坚固耐用、经济高效的场截止 II Trench 结构，为要求苛刻的开关应用提供出色性能，提供低导通状态电压，并最大限度降低开关损耗。该 IGBT 非常适用于电机驱动器应用。此器件集成具有低正向电压的软快速共封装续流二极管。

  • Motor Drive Inverter
  • Industrial Switching
  • Welding
  • Extremely Efficient Trench with Field Stop Technology
  • TJmax = 175°C
  • Soft Fast Reverse Recovery Diode
  • Optimized for Low VCEsat
  • 10 µs Short Circuit Capability

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

参考价格

NGTB30N120L2WG

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已停产

CAD Model

Pb

A

H

P

TO-247-3

340AL

NA

0

TUBE

30

No

-

1200

30

1.7

1.5

1.4

4.4

450

32

310

10

-

534

Yes

Price N/A

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可靠性数据

Die Related Summary Data

Device: NGTB30N120L2WG

Equivalent to wafer fab process: IGN IGBT

产品技术

产品技术

等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

IGN IGBT

12

30217118471

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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