IGBTs | NGTB30N65IHL2

IGBT 650V 30A FS2 电感加热

Obsolete

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概览

此款绝缘门极双极晶体管 (IGBT) 采用坚固耐用、经济高效的场截止 (FS) 沟槽结构，为要求苛刻的开关应用提供卓越性能，提供低导通状态电压，并最大限度降低开关损耗。此款 IGBT 非常适合半桥谐振应用。该器件结合了一个柔性和快速的共封装续流二极管，带有较低正向电压。

  • Inductive Heating
  • Soft Switching

  • Extremely Efficient Trench with Fieldstop Technology
  • Low Switching Loss Reduces System Power Dissipation
  • Optimized for Low Losses in IH Cooker Application
  • TJmax = 175°C
  • Soft, Fast Free Wheeling Diode

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MSL Temp (°C)

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ON Target

Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

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Irr Typ (A)

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Co-Packaged Diode

Reference Price

NGTB30N65IHL2WG

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CAD Model

Pb

A

H

P

TO-247-3

340AL

NA

0

TUBE

30

N

-

650

30

1.7

1.1

0.2

-

430

35

135

-

-

219

Yes

Price N/A

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可靠性数据

Die Related Summary Data

Device: NGTB30N65IHL2WG

Equivalent to wafer fab process: IGN IGBT

产品技术

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

IGN IGBT

12

24556821265

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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