IGBTs | NGTB40N120FL2
概览
This Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor UPS and solar applications. Incorporated into the device is a softand fast co−packaged free wheeling diode with a low forward voltage.
- Solar Inverter
- Uninterruptible Power Inverter Supplies (UPS)
- Welding
- Welders
- UPS Systems
- PV Inverters
- Extremely Efficient Trench with Field Stop Technology
- TJmax = 175°C
- Soft Fast Reverse Recovery Diode
- Optimized for High Speed Switching
- 10 µs Short Circuit Capability
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NGTB40N120FL2WG
量产中
Pb
A
H
P
TO-247
NA
0
TUBE
30
Yes
-
1200
40
2
2
1.1
3.4
240
18
313
10
-
535
Yes
$3.3532
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