IGBTs | NGTB40N120IHR

IGBT, 1200V 40A FS2-RC Induction Heating

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概览

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications.

  • Inductive Heating
  • Extremely Efficient Trench with Fieldstop Technology
  • Optimized for Low Case Temperature in IH Cooker Applications
  • Reliable and Cost Effective Single Die Solution
  • Consumer Appliances
  • Soft Switching

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V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

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Irr Typ (A)

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Co-Packaged Diode

参考价格

NGTB40N120IHRWG

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Last Shipments

CAD Model

Pb

A

H

P

TO-247-3

340AL

NA

0

TUBE

30

No

-

1200

40

2.3

2.1

0.95

-

-

-

225

-

-

384

Yes

Price N/A

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可靠性数据

Die Related Summary Data

Device: NGTB40N120IHRWG

Equivalent to wafer fab process: IGN IGBT

产品技术

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

IGN IGBT

12

30217118471

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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