IGBT,超场截止 — 1200V 40A,低 VCEsat

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此绝缘门极双极晶体管 (IGBT) 采用坚固耐用、经济高效的超场截止 (FS) 沟槽结构,为要求苛刻的开关应用提供出色性能,提供低导通状态电压,并最大限度降低开关损耗。该 IGBT 非常适用于电机驱动器应用。该器件结合了一个软性和快速的组合封装续流二极管,带有低正向电压。

  • Motor Drive Inverter
  • Industrial Switching
  • Welding

  • Industrial

  • Extremely Efficient Trench with Ultra Field Stop Technology
  • TJmax = 175°C
  • Soft Fast Reverse Recovery Diode
  • Optimized for Low VCEsat
  • These are Pb−Free Devices

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Package Type

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MSL Temp (°C)

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ON Target

Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

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Irr Typ (A)

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Co-Packaged Diode

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NGTB40N120L3WG

Last Shipments

CAD Model

Pb

A

H

P

TO-247

NA

0

TUBE

30

N

-

1200

40

1.55

3

1.5

1.5

86

12

220

-

-

454

Yes

Price N/A

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