IGBTs | NGTB40N120S3

IGBT，1200V，40A，低 VF FSIII

Obsolete

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概览

此款绝缘门极双极晶体管 (IGBT) 采用耐用和成本高效的超场截止沟槽结构，在要求较高的开关应用中提供卓越的性能，还能提供低开关损耗。该 IGBT 适用于需要带低 VF 二极管的快速开关 IGBT，如相移位全桥等。此器件集成了续流二极管，采用低正向电压。

  • Welding
  • Uninterruptible Power Inverter Supplies (UPS)
  • Motor Control

  • Industrial

  • Extremely Efficient Trench with Field Stop Technology
  • TJmax = 175°C
  • Low VF Reverse Diode
  • Optimized for High Speed Switching
  • These are Pb−Free Devices

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状态

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

Reference Price

NGTB40N120S3WG

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Obsolete

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CAD Model

Pb

A

H

P

TO-247-3

340AL

NA

0

TUBE

30

N

-

1200

40

1.7

2

1.1

2.2

256

19

212

-

-

454

Yes

Price N/A

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可靠性数据

Die Related Summary Data

Device: NGTB40N120S3WG

Equivalent to wafer fab process: HVFET

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

HVFET

21

40576236131

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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