IGBTs | NGTB40N65IHL2
概览
This Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on state voltage and minimal switching loss. The IGBT iswell suited for half bridge resonant applications. Incorporated into thedevice is a soft and fast co−packaged free wheeling diode with a lowforward voltage.
- Inductive Heating
- Soft Switching
- Extremely Efficient Trench with Fieldstop Technology
- Low Switching Loss Reduces System Power Dissipation
- Optimized for Low Losses in IH Cooker Application
- TJmax = 175°C
- Soft, Fast Free Wheeling Diode
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Obsolete
Pb
A
H
P
TO-247-3
NA
0
TUBE
30
N
-
650
45
1.8
1.2
0.36
-
465
36
135
-
-
300
Yes
Price N/A
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