This Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on state voltage and minimal switching loss. The IGBT iswell suited for half bridge resonant applications. Incorporated into thedevice is a soft and fast co−packaged free wheeling diode with a lowforward voltage.
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NGTB40N65IHL2WG
Obsolete
Pb
A
H
P
TO-247-3
NA
0
TUBE
30
N
-
650
45
1.8
1.2
0.36
-
465
36
135
-
-
300
Yes
Price N/A
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