IGBT, 650V 40A FS2 Induction Heating
Obsolete
This Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on state voltage and minimal switching loss. The IGBT iswell suited for half bridge resonant applications. Incorporated into thedevice is a soft and fast co−packaged free wheeling diode with a lowforward voltage.
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Package Type
Case Outline
MSL Type
MSL Temp (°C)
Container Type
Container Qty.
ON Target
Family
V(BR)CES Typ (V)
IC Max (A)
VCE(sat) Typ (V)
VF Typ (V)
Eoff Typ (mJ)
Eon Typ (mJ)
Trr Typ (ns)
Irr Typ (A)
Gate Charge Typ (nC)
Short Circuit Withstand (µs)
EAS Typ (mJ)
PD Max (W)
Co-Packaged Diode
Reference Price
Obsolete
Pb
A
H
P
TO-247-3
NA
0
TUBE
30
N
-
650
45
1.8
1.2
0.36
-
465
36
135
-
-
300
Yes
Price N/A
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可靠性数据
Die Related Summary Data
Device: NGTB40N65IHL2WG
Equivalent to wafer fab process: IGN IGBT
产品技术
产品技术
等效器件小时
平均故障间隔时间/平均无故障时间(按小时计算)
FITS
IGN IGBT
12
24556821265
More Details
Re-calculate Data
Data is based on the following assumptions.
Note: The temperature and confidence level may be adjusted to your requirements.
Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)