IGBTs | NGTB40N65IHRT

IGBT, Monolithic with Reverse Conducting Diode, 650 V, 40 A

Obsolete

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This Insulated Gate Bipolar Transistor (IGBT) features robust andcost effective Field Stop (FS2) trench construction with a monolithicRC Diode. It provides a cost effective Solution for applications wherediode losses are minimal. The IGBT is optimized for low conductionlosses (low VCEsat) and is well suited for resonant or soft switchingapplications.

  • Inductive Heating
  • Air Conditioning PFC
  • Welding

  • Industrial

  • Extremely Efficient Trench with Fieldstop Technology
  • Low Conduction Loss Design for Soft Switching Application
  • Reduced Power Dissipation in Inducting Heating Application
  • Reliable and Cost Effective Single Die Solution
  • This is a Pb−Free Device

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V(BR)CES Typ (V)

IC Max (A)

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NGTB40N65IHRTG

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Obsolete

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CAD Model

Pb

A

H

P

TO-3P-3

340AB

NA

0

TUBE

30

N

-

650

40

1.55

1.5

0.42

-

-

-

190

-

-

405

-

Price N/A

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