IGBTs | NGTB50N60L2

IGBT 600V 50A FS2 低饱和压

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概览

此款绝缘门极双极晶体管 (IGBT) 采用坚固耐用、经济高效的场截止 (FS) 沟槽结构，为要求苛刻的开关应用提供卓越性能，提供低导通状态电压，并最大限度降低开关损耗。

  • Motor Drive Inverters
  • Industrial Switching
  • Welding
  • Extremely Efficient Trench with Field Stop Technology
  • TJmax = 175°C
  • Soft Fast Reverse Recovery Diode
  • Optimized for High Speed Switching
  • 5 s Short−Circuit Capability
  • These are Pb−Free Devices

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MSL Temp (°C)

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ON Target

Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

参考价格

NGTB50N60L2WG

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Last Shipments

CAD Model

Pb

A

H

P

TO-247

NA

0

TUBE

30

No

-

600

50

1.5

1.7

0.6

0.8

67

7.4

310

5

-

500

Yes

Price N/A

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可靠性数据

Die Related Summary Data

Device: NGTB50N60L2WG

Equivalent to wafer fab process: IGN IGBT

产品技术

产品技术

等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

IGN IGBT

12

30217118471

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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