IGBT,650V,场截止 II,75 A

Obsolete

概览

此款隔离门极双极晶体管 (IGBT) 采用坚固耐用、经济高效的场截止 II 沟槽结构,为要求苛刻的开关应用提供卓越性能,提供低导通状态电压,并最大限度降低开关损耗。另外,此新器件采用 TO−247−4L 封装,与标准 TO−247−3L 封装相比提供了明显的 Eon 损耗降低。此款 IGBT 非常适合 UPS 和太阳能应用。此器件集成了一个柔性、快速的共封装续流二极管,采用低正向电压。

  • Solar Inverters
  • Uninterruptible Power Supplies (UPS)
  • Neutral Point Clamp Topology

  • Industrial

  • Extremely Efficient Trench with Field Stop Technology
  • TJmax = 175°C
  • Improved Gate Control Lowers Switching Losses
  • Separate Emitter Drive Pin
  • TO-247-4L for Minimal Eon Losses
  • Optimized for High Speed Switching
  • These are Pb-Free Devices

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ON Target

Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

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Irr Typ (A)

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NGTB75N65FL2WAG

CAD Model

Pb

A

H

P

TO-247-4

NA

0

TUBE

30

N

-

650

75

1.7

2.3

1.2

0.61

90

7

310

-

-

536

Yes

Price N/A

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