IGBT, 1200V 15A FS2 bare die

Obsolete

概览

This Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss.

  • Solar Inverter
  • Uninterruptible Power Inverter Supplies (UPS)
  • Welding

  • Extremely Efficient Trench with Field Stop Technology
  • TJmax = 175°C
  • Optimized for High Speed Switching
  • 10 µs Short Circuit Capability
  • These are Pb−Free Devices

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Package Type

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ON Target

Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

Reference Price

NGTD13T120F2WP

CAD Model

Pb

A

H

P

-

-

NA

0

WJAR

1

N

-

1200

-

2

-

-

-

-

-

-

10

-

-

-

Price N/A

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