IGBTs | PCGA200T65NF8M1

IGBT 650 V，200 A 场截止 Trench Gen3 (FS3) 裸片，带可焊接顶层金属可与 PCRKA20065F8M1 配对

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概览

此款 650V 场截止 Trench Gen3 (FS3) IGBT 裸片的裸片尺寸为 10mm x 10mm。它的发射极垫覆有镍/银可焊顶层金属，因此发射极联接得以采用先进的电源模块组装技术，包括银烧结、铜裸焊等。

  • Automotive Traction Modules
  • General Power Modules
  • xEV
  • AEC-Q101 Qualified
  • Maximum Junction Temperature 175°C
  • Positive Temperature Coefficient
  • Very Low Saturation Voltage: VCE(SAT) = 1.53V(Typ.) @ IC = 200A
  • Short Circuit Rated
  • Final Solderable Metal Layer

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V(BR)CES Typ (V)

IC Max (A)

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Irr Typ (A)

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Co-Packaged Diode

参考价格

PCGA200T65NF8M1

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MTFRM

1

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650

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1.53

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可靠性数据

Die Related Summary Data

Device: PCGA200T65NF8M1

Equivalent to wafer fab process: IGBT

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

IGBT

3

4562573939

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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