IGBTs | SGF5N150UF

IGBT，分离式，高性能

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概览

安森美半导体的绝缘门极双极晶体管 (IGBT) 提供低导通和开关损耗。SGF5N150UF 适合用于开关电源应用。

  • 其他工业

  • 高速开关
  • 低饱和电压： V CE(sat) = 4.7 V @ I C = 5A
  • 高输入阻抗

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

Reference Price

SGF5N150UFTU

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Last Shipments

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CAD Model

Pb

A

H

P

TO-3PF-3L

340AH

NA

0

TUBE

360

N

-

1500

10

4.7

-

0.1

0.19

-

-

30

-

-

62.5

No

Price N/A

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可靠性数据

Die Related Summary Data

Device: SGF5N150UFTU

Equivalent to wafer fab process: IGBT

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

IGBT

1

2930462991

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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