IGBTs | SGH10N60RUFD

600V，10A 短路额定 IGBT

Obsolete

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概览

安森美半导体的 RUFD 系列绝缘门极双极晶体管 (IGBT) 提供低导通和开关损耗以及短路耐受性。RUFD 系列适用于电机控制、不中断电源 (UPS) 和通用逆变器等短路耐受性为必需特性的应用。

  • 工业级电机

  • 额定短路时间 10 us，需 T C = 100°C、V GE = 15 V
  • 高速开关
  • 低饱和电压： V CE(sat) = 2.2 V，需 I C = 10 A
  • 高输入阻抗
  • CO-PAK、IGBT 及 FRD： trr=42 ns（典型值）

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

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SGH10N60RUFDTU

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Obsolete

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CAD Model

Pb

A

H

P

TO-3P-3L

340BZ

NA

0

TUBE

450

N

-

600

10

2.2

-

-

-

42

-

-

-

-

-

Yes

Price N/A

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可靠性数据

Die Related Summary Data

Device: SGH10N60RUFDTU

Equivalent to wafer fab process: IGBT

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

IGBT

1

2930462991

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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