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NSVJ3557SA3 是一款具有低噪声放大 (LNA) 功能的单 N 沟道结型FET,适用于汽车天线应用。该器件具有高正向转移导纳和低噪声特性,与目前的 JFET 相比,具有高 ESD 抗扰度。此器件通过 AEC-Q101 认证,符合生产件批准程序 (PPAP),适用于汽车应用。
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IDSS Min (µA)
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NSVJ3557SA3T1G
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可靠性数据
Die Related Summary Data
Device: NSVJ3557SA3T1G
Equivalent to wafer fab process: SSD
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等效器件小时
平均故障间隔时间/平均无故障时间(按小时计算)
FITS
SSD
0
6889897810
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Data is based on the following assumptions.
Note: The temperature and confidence level may be adjusted to your requirements.
Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)