JFETs | TF412S

N 沟道 JFET，30 V，1.2 至 3.0 mA，5.0 mS，SOT-883

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概览

TF412S 是一款结 FET，30 V，10 mA，N 沟道，SOT-883(1.0mm×0.6mm×0.4mm)，用于低频率通用型放大器和阻抗转换器应用。

  • Low-Frequency General-Purpose Amplifier
  • Impedance Conversion
  • Infrared Sensor Applications

  • Infrared Sensor
  • Gas Sensor
  • Microphone
  • Transceiver, Radio Equipment
  • Acoustic Equipument
  • USB Type-C

  • Low IGSS 1.0nA MAX
  • Low IDSS 1.2-3.0mA
  • Ultrasmall package facilitates miniaturization in end products
  • Halogen free compliance

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Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

IDSS Min (µA)

IDSS Max (µA)

V(BR)GSS Min (V)

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Crss Max (pF)

Reference Price

TF412ST5G

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CAD Model

Pb

A

H

P

SOT-883

506CB

1

260

REEL

8000

Y

N-Channel

1200

3000

30

4

1.1

$0.0836

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可靠性数据

Die Related Summary Data

Device: TF412ST5G

Equivalent to wafer fab process: SST

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

SST

0

4654891639

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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