2N7002L: N 沟道小信号 MOSFET 60V,115mA,7.5 Ω

Datasheet: MOSFET – N-Channel, Small Signal, SOT-23 60 V, 115 mA
Rev. 10 (98kB)
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N 沟道小信号 MOSFET 60V,115mA,7.5 Ω
特性
 
  • RoHS Compliant
评估/开发工具信息
产品 状况 Compliance 简短说明 行动
LIGHTING-POWER-POE-GEVB Active
Pb-free
Power Over Ethernet (PoE) Power Module (90 Watts), Connected Lighting Platform
NCP1095GEVB Active
Pb-free
PoE-PD Interface Controller Evaluation Board, IEEE 802.3bt
NCP1096GEVB Active
Pb-free
PoE-PD Interface Controller Evaluation Board, IEEE 802.3bt
FutureElectronics (2020-08-19) : 1
Availability & Samples
Specifications
外形
Interactive Block Diagram
产品
状况
Compliance
具体说明
封装
MSL
容器
预算价格 (1千个数量的单价)
类型
外形
类型
Temperature
类型
数量
2N7002LT1G Active
Pb-free
Halide free
2N7002L SOT-23-3 318-08 1 260 Tape and Reel 3000 $0.024
2N7002LT3G Active
Pb-free
Halide free
2N7002L SOT-23-3 318-08 1 260 Tape and Reel 10000 $0.024
2N7002LT7G Active
Pb-free
Halide free
2N7002L SOT-23-3 318-08 1 260 Tape and Reel 3500 $0.024
市场订货至交货的时间(周) : Contact Factory
Avnet   (2020-08-19 00:00) : >500K
FutureElectronics   (2020-08-19 00:00) : >1M
PandS   (2020-09-14 00:00) : >50K
市场订货至交货的时间(周) : Contact Factory
Avnet   (2020-08-19 00:00) : >100K
FutureElectronics   (2020-08-19 00:00) : >50K
市场订货至交货的时间(周) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Channel Polarity
Configuration
V(BR)DSS Min (V)
VGS Max (V)
VGS(th) Max (V)
ID Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
RDS(on) Max @ VGS = 10 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Package Type
2N7002LT1G  
 $0.024 
Pb
H
 Active   
N-Channel
Single
60
±20
2.5
0.115
0.225
-
7500
7500
-
-
50
SOT-23-3
2N7002LT3G  
 $0.024 
Pb
H
 Active   
N-Channel
Single
60
±20
2.5
0.115
0.225
-
7500
7500
-
-
50
SOT-23-3
2N7002LT7G  
 $0.024 
Pb
H
 Active   
SOT-23-3
外形
318-08   
封装
2N7002L: N 沟道小信号 MOSFET 60V,115mA,7.5 Ω
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