Small Signal MOSFETs | 2N7002V

N沟道增强模型场效应晶体管

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概览

N-Channel Enhancement Mode Field Effect Transistor 60V, 0.28A, 2Ω

  • This product is general usage and suitable for many different applications.

  • 双N沟道数字MOSFET
  • 低导通电阻
  • 低栅极阈值电压
  • 低输入电容
  • 快速开关速度
  • 低输入/输出泄漏
  • 超小型表面贴装封装
  • 无铅设计/符合RoHS标准

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

2N7002V

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Lifetime

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CAD Model

Pb

A

H

P

SOT-563

419BH

1

260

REEL

3000

N

N-Channel

PowerTrench® T1

SC-6

Small Signal

Logic

0

Dual

0

60

Q1=Q2=2000

±20

2.5

0.28

0.25

-

Q1=Q2=7500

-

-

37.8

-

-

12.4

6.5

$0.1319

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可靠性数据

Die Related Summary Data

Device: 2N7002V

Equivalent to wafer fab process: 3H

产品技术

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

3H

0

323529758

More Details

Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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