MOSFETs | NDT3055L

N 沟道逻辑电平增强型场效应晶体管，60V，4A，100mΩ

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概览

此类 N 沟道逻辑电平增强型电场效应晶体管是使用 Fairchild 的高单元密度 DMOS 专属技术生产的。此极高密度工艺特别适用于最大程度降低导通电阻，提供卓越的开关性能，可承受雪崩和换相模式下的高能量脉冲。此类器件尤其适用于需要快速开关、线内低功率损耗和瞬变防止的低压应用，如直流电机控制和 DC/DC 转换。

  • This product is general usage and suitable for many different applications.
  • 4 A，60 V。 RDS(ON) = 0.100 Ω @ VGS = 10 V，RDS(ON) = 0.120 Ω @ VGS = 4.5 V。
  • 低驱动要求使得能够直接从逻辑驱动器进行操作。 VGS(TH)< 2V。
  • 采用高密度单元设计，可实现极低的RDS(ON)。
  • 采用广泛使用的表面贴装封装，具有高功率和高电流处理能力。

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

NDT3055L

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Active

CAD Model

Pb

A

H

P

SOT-223-4 / TO-261-4

318H-01

1

260

REEL

4000

N

60

100

N-Channel

Single

±20

2

4

3

-

120

-

13

345

$0.4045

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