MOSFETs | BS270

N 沟道增强模式场效应晶体管 60V，400mA，2Ω

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概览

此 N 沟道增强型 MOSFET 是使用专利的高单元密度 DMOS 技术生产的。此产品可最大程度地降低导通电阻，同时具备强固、可靠和快速开关性能。它可用于最高要求 500 mA DC 的大多数应用。这些产品尤其适合低电压、低电流应用，如小型伺服电机控制、功率 MOSFET 门极驱动器和其他开关应用。

  • This product is general usage and suitable for many different applications.
  • Power MOSFET Gate Drivers
  • Servo Motor Control
  • 400 mA，60 V。RDS(ON) = 2 Ω （VGS = 10 V 时）。
  • 高密度单元设计可实现极低的 RDS(ON)。
  • 电压控制的小型信号开关。
  • 坚固而可靠。
  • 高饱和电流能力。

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

BS270

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Active

CAD Model

Pb

A

H

P

TO-92-3

135AN

NA

0

BLKBG

10000

Y

60

2000

N-Channel

Single

±20

2.5

0.4

0.625

-

-

-

0.6

20

$0.1041

More Details

BS270-D74Z

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Active

CAD Model

Pb

A

H

P

TO-92-3 LF

135AR

NA

0

FNFLD

2000

Y

60

2000

N-Channel

Single

±20

2.5

0.4

0.625

-

-

-

0.6

20

$0.0921

More Details

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