N沟道逻辑电平增强型场效应晶体管100V,170mA,6Ω

概览

这款N沟道增强型MOSFET采用专有的高单元密度DMOS技术生产,用于最大限度地减少导通电阻,同时提供稳固、可靠和快速开关的性能表现。BSS123尤其适合低电压、低电流的应用,如小型伺服电机控制、功率MOSFET栅极驱动器和其它开关应用。

  • 本产品为通用产品,适合各类不同应用。
  • 小型伺服电机控制
  • 功率MOSFET栅极驱动器

  • 0.17A, 100V
     RDS(ON) = 6Ω @ VGS = 10V
     RDS(ON) = 10Ω @ VGS = 4.5V
  • 高密度单元设计,实现极低的RDS(ON)
  • 稳固可靠
  • 紧凑型工业标准SOT-23表面贴装封装

Tools and Resources

Product services, tools and other useful resources related to BSS123

Buy/Parametrics Table

搜寻

Close Search

产品:

2

分享

产品系列:

可订购器件:

2

产品

状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

Active

CAD Model

Pb

A

H

P

SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P

1

260

REEL

3000

N

N-Channel

PowerTrench® T1

SOT-23

Small Signal

Logic

0

Single

0

100

6000

±20

2

0.17

0.36

-

10000

-

1.8

73

0.3

-

7

3.4

$0.0432

More Details

Obsolete

CAD Model

Pb

A

H

P

SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P

1

260

REEL

3000

N

N-Channel

PowerTrench® T1

SOT-23-3/5

Small Signal

Logic

0

Single

0

100

6000

±20

2

0.17

0.36

-

10000

-

1.8

73

0.3

-

7

3.4

Price N/A

More Details

Show More

1-25 of 25

Products per page

Jump to :

contact sales icon

Support on the go

Find and compare products, get support and connect with onsemi sales team.