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这款N沟道增强型MOSFET采用专有的高单元密度DMOS技术生产,用于最大限度地减少导通电阻,同时提供稳固、可靠和快速开关的性能表现。BSS123尤其适合低电压、低电流的应用,如小型伺服电机控制、功率MOSFET栅极驱动器和其它开关应用。
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CAD Models
Compliance
Package Type
Case Outline
MSL Type
MSL Temp (°C)
Container Type
Container Qty.
ON Target
Channel Polarity
Silicon Family
Package Name
Type
Gate Level
Wide SOA Mosfets
Configuration
OPN in older Technology
V(BR)DSS Min (V)
RDS(on) Max @ VGS = 10 V (mΩ)
VGS Max (V)
Vgs(th) Max (V)
Id Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Qgd Typ @ VGS = 4.5 V (nC)
Qrr Typ (nC)
Coss Typ (pF)
Crss Typ (pF)
Reference Price
BSS123
Active
Pb
A
H
P
SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P
1
260
REEL
3000
N
N-Channel
PowerTrench® T1
SOT-23
Small Signal
Logic
0
Single
0
100
6000
±20
2
0.17
0.36
-
10000
-
1.8
73
0.3
-
7
3.4
$0.0432
More Details
Obsolete
Pb
A
H
P
SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P
1
260
REEL
3000
N
N-Channel
PowerTrench® T1
SOT-23-3/5
Small Signal
Logic
0
Single
0
100
6000
±20
2
0.17
0.36
-
10000
-
1.8
73
0.3
-
7
3.4
Price N/A
More Details
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可靠性数据
Die Related Summary Data
Device: BSS123-F169
Equivalent to wafer fab process: TR
产品技术
产品技术
等效器件小时
平均故障间隔时间/平均无故障时间(按小时计算)
FITS
TR
1
1603286882
More Details
Re-calculate Data
Data is based on the following assumptions.
Note: The temperature and confidence level may be adjusted to your requirements.
Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)