Small Signal MOSFETs | BSS138W

N 沟道逻辑电平增强型场效应晶体管 50V，210mA，3.5Ω

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概览

这是一款 N 沟道增强型 MOSFET。此产品可最大程度地降低导通电阻，同时具备强固、可靠和快速开关性能。BSS138W 尤其适合低电压、低电流应用，如小型伺服电机控制、功率 MOSFET 门极驱动器和其他开关应用。

  • This product is general usage and suitable for many different applications.

  • RDS(ON) = 3.5 Ω @ VGS = 10V, ID = 0.22A
  • RDS(ON) = 6.0 Ω @ VGS = 4.5V, ID = 0.22A
  • 高密度单元设计可实现极低的 RDS(ON)。
  • 坚固而可靠。
  • 工业标准SOT-323紧凑型表面贴装封装。

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

BSS138W

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CAD Model

Pb

A

H

P

SC-70-3 / SOT-323-3

419AB

1

260

REEL

3000

N

N-Channel

PowerTrench® T1

SC-3

Small Signal

Logic

0

Single

0

50

3500

±20

1.5

0.21

0.34

-

6000

-

0.65

38

0.22

-

5.9

3.5

$0.0548

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可靠性数据

Die Related Summary Data

Device: BSS138W

Equivalent to wafer fab process: 3H

产品技术

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

3H

0

323529758

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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