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N 沟道逻辑电平增强型场效应晶体管 50V,210mA,3.5Ω
Active, Not Rec
这是一款 N 沟道增强型 MOSFET。此产品可最大程度地降低导通电阻,同时具备强固、可靠和快速开关性能。BSS138W 尤其适合低电压、低电流应用,如小型伺服电机控制、功率 MOSFET 门极驱动器和其他开关应用。
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CAD Models
Compliance
Package Type
Case Outline
MSL Type
MSL Temp (°C)
Container Type
Container Qty.
ON Target
Channel Polarity
Silicon Family
Package Name
Type
Gate Level
Wide SOA Mosfets
Configuration
OPN in older Technology
V(BR)DSS Min (V)
RDS(on) Max @ VGS = 10 V (mΩ)
VGS Max (V)
Vgs(th) Max (V)
Id Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Qgd Typ @ VGS = 4.5 V (nC)
Qrr Typ (nC)
Coss Typ (pF)
Crss Typ (pF)
Reference Price
Active, Not Rec
Pb
A
H
P
SC-70-3 / SOT-323-3
1
260
REEL
3000
N
N-Channel
PowerTrench® T1
SC-3
Small Signal
Logic
0
Single
0
50
3500
±20
1.5
0.21
0.34
-
6000
-
0.65
38
0.22
-
5.9
3.5
$0.0548
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可靠性数据
Die Related Summary Data
Device: BSS138W
Equivalent to wafer fab process: 3H
产品技术
产品技术
等效器件小时
平均故障间隔时间/平均无故障时间(按小时计算)
FITS
3H
0
323529758
More Details
Re-calculate Data
Data is based on the following assumptions.
Note: The temperature and confidence level may be adjusted to your requirements.
Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)