MOSFETs | BSS84

P沟道增强型场效应晶体管-50V，-0.13A，10Ω

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概览

这款P沟道增强型MOSFET是采用高单元密度的沟槽型MOSFET技术生产，用于最大限度地减少导通电阻，同时提供稳固、可靠和快速开关的性能表现。BSS84能够以最低的消耗用于需要高达0.13A直流电的绝大数应用中，并可提供最高达0.52A的电流。这款产品尤其适合需要低电流上桥开关的低压应用。

  • 本产品为通用产品，适合各类不同应用。
  • -0.13A, -50V
     RDS(ON) = 10Ω @ VGS = -5V
  • 电压控制P沟道小信号开关
  • 高密度单元设计，实现低RDS(ON)
  • 高饱和电流

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

BSS84

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Active

CAD Model

Pb

A

H

P

SOT-23 (TO-236)

318

1

260

REEL

3000

N

-50

-

P-Channel

Single

±20

-2

-0.13

0.36

-

10000

-

0.9

73

$0.1093

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