MOSFETs | ECH8315

P 沟道，功率 MOSFET，-30V，-7.5A，25mΩ

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概览

此功率 MOSFET 使用安森美半导体的沟槽技术，这是专为降低导通电阻而设计的技术。此器件适用于具有低导通电阻要求的应用。

  • Load Switch
  • Protection Switch for Lithium-ion Battery
  • Motor Driver
  • Digital Still Camera, Wireless speaker
  • Inkjet Printer, Fan Motor , LiB Charger
  • Low On-Resistance
  • ESD Diode-Protected Gate
  • RoHS compliance
  • 4.0V drive

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Channel Polarity

Configuration

VGS Max (V)

VGS(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Reference Price

ECH8315-TL-H

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Active

CAD Model

Pb

A

H

P

SOT-28 FL / ECH-8

318BF

1

260

REEL

3000

N

-30

25

P-Channel

Single

20

2.6

-7.5

1.5

-

44

-

17

875

$0.2621

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