Low/Medium Voltage MOSFETs | ECH8667

双 P 沟道，功率 MOSFET，-30V，-5.5A，39mΩ

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概览

ECH8667 是一款 P 沟道功率 MOSFET，-30V，-5.5A，39mΩ，双 ECH8，适用于通用开关应用。

  • This product is general usage and suitable for many different applications

  • ON-resistance RDS(on)1 = 30mΩ (typ)
  • 4V Drive
  • Protection diode in

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

ECH8667-TL-H

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CAD Model

Pb

A

H

P

SOT-28 FL / ECH-8

318BF

1

260

REEL

3000

N

P-Channel

PowerTrench® T1

Power 33

Low-Medium Voltage

Logic

0

Dual

0

-30

39

20

2.6

-5.5

1.3

-

Q1=Q2=77

-

13

600

3.2

-

145

110

$0.3188

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可靠性数据

Die Related Summary Data

Device: ECH8667-TL-H

Equivalent to wafer fab process: TRENCH FET LEGACY

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

TRENCH FET LEGACY

2

15086608915

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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