Small Signal MOSFETs | EFC6601R

双 N 沟道功率 MOSFET，24V，13A，11.5mΩ

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EFC6601R 是一款 N 沟道功率 MOSFET，24V，13A，11.5mΩ，双 EFCP，适用于锂离子电池充电和放电开关应用。

  • This product is general usage and suitable for many different applications

  • 2.5V drive
  • Protection diode in
  • Common-drain type
  • 2KV ESD HBM

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

EFC6601R-TR

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CAD Model

Pb

A

H

P

WLCSP-6

567HS

1

260

REEL

5000

N

N-Channel

PowerTrench® T1

WLCSP

Small Signal

Logic

0

Dual Common Drain

0

20

-

12

1.3

13

2

Q1=Q2=17

Q1=Q2=11.5

29

48

NA

-

-

-

-

$0.3161

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可靠性数据

Die Related Summary Data

Device: EFC6601R-TR

Equivalent to wafer fab process: TRENCH FET LEGACY

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

TRENCH FET LEGACY

2

15086608915

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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