N 沟道 SuperFET® MOSFET 600V, 47A, 70mΩ

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概览

SuperFET®MOSFET 是飞兆半导体第一代利用电荷平衡技术实现出色低导通电阻和更低栅极电荷性能的高压超级结(SJ)MOSFET 系列产品。这项技术专用于最小化传导损耗并提供卓越的开关性能、dv/dt 额定值和更高雪崩能量。因此,SuperFET MOSFET 非常适合开关电源应用,如功率因数校正(PFC)、服务器/电信电源、平板电视电源、ATX 电源及工业电源应用。

  • This product is general usage and suitable for many different applications.
  • Solar Invertor
  • AC-DC Power Supply
  • Power Factor Correction
  • Switching Power Applications
  • Industrial Power Applications

  • 650V @TJ = 150°C
  • 典型值RDS(on) = 58mΩ
  • 超低栅极电荷(典型值Qg = 210nC )
  • 低有效输出电容(典型值Coss.eff = 420pF )
  • 100% 经过雪崩击穿测试
  • 符合 RoHS 标准

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FCA47N60-F109

Active

CAD Model

Pb

A

H

P

TO-3P-3L

NA

0

TUBE

450

Y

N-Channel

PowerTrench® T1

TO-3PN

High Voltage

Standard

0

Single

0

600

70

±30

5

47

417

-

-

-

210

5900

110

25000

3200

250

$5.6068

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